Accueil > Séminaires & Soutenances > Séminaires, soutenances de thèses et HDR précédents > 2019 > Séminaires 2019 > Le jeudi 7 novembre 2019 à 10h30
Le jeudi 7 novembre 2019 à 10h30
Lieu : Palaiseau, salle L.Michel (CPhT)
10h30 : Accueil café
10h45 : Séminaire
Title : Molecular dynamics simulations for a better understanding of plasma-surface interactions in low-pressure RF plasmas
Speaker : Emilie Despiau-Pujo (Chercheuse au LTM, Université Grenoble Alpes/CNRS)
Abstract :
Low-temperature RF plasmas have been used in the semiconductor industry
since the 1960s to process materials and enable a continuous miniaturization
of devices. In advanced nano-electronics, innovative transistor architectures with new materials are being implemented to replace conventional planar bulk transistors. Featuring ultrathin layered materials (a few nm-thick), these structures must be patterned with a nanometric precision to preserve the electronic properties of active layers. In particular, plasma-induced damage and reactive layers formed during the etch processes must be carefully controlled, a challenge which cannot be addressed by conventional continuous- waves CCP or ICP plasmas.
In this presentation, I will discuss various examples of molecular dynamics simulations – coupled with experiments – which were developed to investigate alternative plasma technologies (pulsed or low-Te plasmas, plasma-enhanced ALE, ion implantation-based processes) and their potential for pattern transfer on ultrathin layered materials (silicon, silicon nitride, graphene). These atomic-scale simulations are used to provide information about the fundamental mechanisms of plasma-surface interaction (i.e. how the flux and energy of plasma species affect the structural and chemical modification of substrates) and to understand the phenomena governing the etch process.

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